XM1001-BD

XM1001-BD Image Reject Mixer 12.0-40.0 GHz Features  Fundamental Image Reject Mixer  8.0 dB Conversion Loss  20.0 dB Image Rejection  +25.0 dBm Input Third Order Intercept (IIP3)  100% On-Wafer RF Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s 12.0-40.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. The device has a conversion loss of 8.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XM1001-BD-000V “V” - vacuum release gel paks XM1001-BD-EV1 evaluation module Chip Device Layout Rev. V1 Absolute Maximum Ratings Parameter Absolute Max. Gate Bias Voltage (Vg) Input Power (RF Pin) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) +0.3 VDC +20.0 dBm +20.0 dBm -65 °C to +165 °C -55 °C to +125 °C 1 ADVANCED: Data Shee...