INJ0203AC1

INJ0203AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance. OUTLINE DRAWING 0.65 2.8 1.5 0.65 FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Drive voltage -2.5V ・Low on Resistance. RDS(on)=100mΩ(TYP). ・High speed switching. ・Small package for easy mounting. ① ②③ 2.8 1.90 0.95 0.95 0.4 Unit：ｍｍ 1.1 0.8 0～0.1 0.13 APPLICATION Switching MAXIMUM RATINGS（Ta=25℃） Symbol VDSS VGSS ID IDP PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) Drain current(Pulse) ※1 Total Power Dissipation Rating -20 -10 -2 -4 200 Unit V V A A mW Tch Channel Temperature Tstg Storage Temperature +150 ℃ -55～+150 ℃ ※1：Pw≦10μs, Duty cycle≦1% JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTER ①：GATE ②：SOURCE ③：DRAIN EQUIVALENT CIRCUIT D G MARKING J・８ S ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol Drain-Source Breakdown Voltage Gate-Source Leak current Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transfer Admittance Static Drain-Source On-State Resistance Input Capacitance Output Capacitance Switching Time V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss ton toff Test Condition ID=-100μA, VGS=0V VGS=±10V, IDS=0A VDS=-20V ,VGS=0V ID=-250μA, VDS=V GS VDS=-10V, ID=-1A ID=-1A, VGS=-4.5V VDS=-10V, VGS=0V, f=1MHz VDD=-15V, ID=-1A...