NTD172C

Naina Semiconductor Ltd. NTD172C Features Thyristor-Diode Module, 175 Amps Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Voltage Code VRRM, Maximum repetitive peak reverse voltage VRSM, Maximum nonrepetitive peak reverse voltage NTD172C 60 80 100 120 140 160 180 (V) 600 800 1000 1200 1400 1600 1800 (V) 700 900 1100 1300 1500 1700 1900 VDRM, Maximum repetitive peak off- state voltage (V) 600 800 1000 1200 1400 1600 1800 IRRM, Maximum reverse leakage current @ TJMAX (mA) 20 Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Symbol Maximum average forward current @ TJ = 850C IT(AV) Maximum average RMS forward current IT(RMS) Maximum non-repetitive surge current Maximum I2t for fusing ITSM I2t Forward voltage drop VTM Critical rate of rise of on-state current di/dt Critical rate of rise of off-state voltage dv/dt Gate current required to trigger IGT Gate voltage required to trigger VGT Maximum holding current IH Maximum latching current IL Isolation voltage VISO Values 175 275 5400 145800 1.4 200 1000 150 2 150 300 3000 Units A A A A2s V A/µs V/µs mA V mA mA V Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Symbol Operating junction temperature range TJ Storage temperature Tstg Thermal resistance, junction ...