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1N5950A

EIC discrete Semiconductors

SILICON ZENER DIODES

1N5913A - 1N5957A VZ : 3.3 - 240 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak r...


EIC discrete Semiconductors

1N5950A

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Description
1N5913A - 1N5957A VZ : 3.3 - 240 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating DC Power Dissipation at TL = 75 ° C (Note1) Maximum Forward Voltage at I F = 200 mA Maximum Thermal Resistance Junction to Ambient Air (Note2) Junction Temperature Range Storage Temperature Range Symbol PD VF Rθ JA TJ Ts Value 1.5 1.5 130 - 55 to + 175 - 55 to + 175 Unit Watts Volts K/W °C °C Note : (1) TL = Lead temperature at 3/8 " (9.5mm) from body (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. Fig. 1 POWER TEMPERATURE DERATING CURVE PD, MAXIMUM DISSIPATION (WATTS) 1.5 1.2 L = 3/8" (9.5mm) 0.9 0.6 0.3 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (°C) UPDATE : SEPTEMBER 9, 2000 ELECTRICAL CHARACTERISTICS Rating at = 25 °C ambient temperature unless otherwise specified TYPE Nominal Zener Voltage V Z @ IZT IZT (V) (mA) 3.3 ...




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