DAN222WMFH

Switching Diode DAN222WMFH lApplications High frequency switching lDimensions (Unit : mm) lFeatures 1)Ultra small mold type. (EMD3) 2)High reliability lConstruction Silicon epitaxial planer 1N ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) lTaping dimensions (Unit : mm) Data Sheet AEC-Q101 Qualified 　　lLand size figure (Unit : mm) EMD3 lStructure lAbsolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Forward voltage(repetitive peak) Average rectified forward current VRM VR IFM Io Surge current(t=1s) Power dissipation Isurge Pd Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR Capacitance between terminals Ct Reverse recovery time trr Limits 80 80 300 100 4 150 150 -55 to +150 Min. Typ. Max. - - 1.2 - - 0.1 - - 3.5 - -4 Unit V V mA mA A mW C C Unit Conditions V IF=100mA μA VR=70V pF VR=6V , f=1MHz ns VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.A DAN222WMFH 　 Data Sheet FORWARD CURRENT:IF(mA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 Ta=125°C 1 0.1 0.01 0 10 Ta=75°C Ta=25°C Ta=-25°C 0.5 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1 f=1MHz 1 0.1 0 950 940 930 920 910 900 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25°C IF=100mA n=30pcs AVE:905.0 mV VF DISPERSION MAP CAPACITANCE BETWEEN TERMI...