AP04N60J-HF

Advanced Power Electronics Corp. AP04N60J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP04N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. BVDSS RDS(ON) ID 620V 2.5Ω 4A G D S TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy3 620 V +30 V 4A 2.2 A 15 A 59.5 W 8 mJ IAR TSTG TJ Avalanche Current Storage Temperature Range Operating Junction Temperature Range 4 -55 to 150 -55 to 150 A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 2.1 110 Units ℃/W ℃/W 1 201501082 AP04N60J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test C...