AP03N70J-HF

Advanced Power Electronics Corp. AP03N70H/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant D G S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP03N70J) are available for low-profile applications. BVDSS RDS(ON) ID 600V 3.6Ω 3.3A G D S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation 600 V +30 V 3.3 A 2.1 A 13.2 A 54.3 W EAS IAR TSTG TJ Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range 0.44 31 2.5 -55 to 150 -55 to 150 W/℃ mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambie...