1SS400SM

Data Sheet Switching Diode 1SS400SM lApplications High frequency switching lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 lLand size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) 0.6±0.1 EMD2 lStructure lAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Forward voltage(repetitive peak) Average rectified forward current VRM VR IFM Io Surge current(t=1s) Junction temperature Isurge Tj Storage temperature Tstg Limits 90 80 225 100 500 150 -55 to +150 Unit V V mA mA mA °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF IR Ct - - 1.2 - 0.1 -3 Reverse recovery time trr - - 4 Unit Conditions V IF=100mA μA VR=80V pF VR=0.5V , f=1MHz ns VR=6V , IF=10mA , RL=100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) 1SS400SM Data Sheet 100 10000 Ta=125℃ 10 1 Ta=125℃ 0.1 Ta=75℃ Ta=25℃ Ta=-25℃ 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1 REVERSE CURRENT:IR(nA) 1000 100 10 1 Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 CAPACITANCE BETWEEN T...