Switching Diode
Switching Diode
1SS400SMFH
lApplication High frequency switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
Datashee...
Description
Switching Diode
1SS400SMFH
lApplication High frequency switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
Datasheet
AEC-Q101 Qualified
lLand size figure (Unit : mm)
0.8
1.2±0.05 1.6±0.1
0.6 1.7
lFeatures 1) Ultra small mold type. (EMD2)
2) High reliability
EMD2
lStructure
lConstruction Silicon epitaxial
0.3±0.05
ROHM : EMD2 JEDEC : SOD-523 JEITA : SC-79
0.6±0.1 dot (year week factory)
lTaping specifications (Unit : mm)
cathode anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Forward voltage(repetitive peak)
VRM VR IFM
Average rectified forward current
Io
Surge current(t=1s)
Isurge
Junction temperature
Tj
Storage temperature
Tstg
Limits 90 80 225 100 500 150
-55 to +150
Unit V V mA mA mA °C °C
lElectrical characteristics (Ta = 25°C) Parameter
Forward voltage Reverse current Capacitance between terminals Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF - - 1.2 V IF=100mA
IR - - 0.1 mA VR=80V
Ct - - 3 pF VR=0.5V, f=1MHz
trr - - 4 ns VR=6V, IF=10mA,RL=100W
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1/5
2013.02 - Rev.B
1SS400SMFH lElectrical characteristic curves
Data Sheet
FORWARD CURRENT : IF(mA)
100
Ta = 75°C 10
Ta = 125°C
1 Ta = 25°C
Ta = -25°C 0.1
0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS
REVERSE CURRENT : IR(nA)
10000
1000
Ta = 125°C
100 Ta = 75°C
10 Ta = 25°C
1
0.1 0
Ta = -25°C 10 20 30 ...
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