www.vishay.com
VFT2045C-M3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra L...
www.vishay.com
VFT2045C-M3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
TMBS ®
ITO-220AB
123 VFT2045C
PIN 1
PIN 2
PIN 3
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package
2 x 10 A 45 V 160 A 0.41 V
150 °C ITO-220AB
Diode variation
Dual common cathode
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temper...