S-LP9435LT1G

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device LP9435LT1G S-LP9435LT1G LP9435LT3G S-LP9435LT3G Marking P94 P94 Shipping 3000/Tape&Reel 10000/Tape&Reel LP9435LT1G S-LP9435LT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 2S Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage -30 VGS Gate-Source Voltage ± 20 ID Continuous Drain Current -5.3 IDM Pulsed Drain Current 1) -20 PD Maximum Power Dissipation TA = 25oC TA = 75oC 1.4 0.8 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 RθJC Junction-to-Case Thermal Resistance 50 RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing 90 Unit V A W oC oC/W Rev .O 1/4 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS Symbol Parameter Static BVDSS Drain-Source Breakdown Voltage RDS(on) Dra...