TSI30H200CW

TSI30H100CW - TSI30H200CW Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Rectifiers FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 1 23 I2PAK TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: I2PAK Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" menas green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) TSI30H 100CW 100 TSI30H TSI30H 120CW 150CW 120 150 30 15 TSI30H 200CW 200 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 Voltage rate of change (Rated VR) dV/dt 10000 TYP MAX TYP MAX TYP MAX TYP MAX Instantaneous forward voltage per diode (Note1) IF = 15A TJ = 25°C TJ = 125°C VF Instantaneous reverse current per ...