TSI10H120CW

TSI10H100CW - TSI10H200CW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifiers FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. 1 2 3 I2PAK MECHANICAL DATA Case: I2PAK Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) TSI10H 100CW 100 TSI10H TSI10H 120CW 150CW 120 150 10 5 TSI10H 200CW 200 Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode IFSM 100 Voltage rate of change (Rated VR) dV/dt Instantaneous forward voltage per diode (Note1) IF = 5A IF = 5A Instantaneous reverse current per diode at rated reverse voltage Typical thermal resistance pe...