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TSF40H200C Dataheets PDF



Part Number TSF40H200C
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Trench Schottky Rectifier
Datasheet TSF40H200C DatasheetTSF40H200C Datasheet (PDF)

Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC.

  TSF40H200C   TSF40H200C


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Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. TSF40H100C thru TSF40H200C Taiwan Semiconductor ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL TSF40H 100C TSF40H 120C TSF40H 150C Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode VRRM IF(AV) 100 120 150 40 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 Voltage rate of change (Rated VR) Instantaneous forward voltage per diode ( Note1 ) IF = 10A IF = 20A IF = 10A IF = 20A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating junction temperature range Storage temperature range Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle dV/dt VF VF IR RθJC TJ TSTG 10000 TYP. MAX. 0.56 - 0.66 0.72 0.48 - 0.59 0.65 - 500 15 45 TYP. 0.60 0.74 0.53 0.63 15 MAX. TYP. - 0.71 0.84 0.79 - 0.59 0.71 0.67 500 45 3 3 - 55 to +150 - 55 to +150 MAX. - 0.89 - 0.77 150 15 TSF40H 200C 200 TYP. 0.75 0.83 0.62 0.70 3 MAX. - 0.93 - 0.80 150 15 UNIT V A A V/μs V μA mA °C/W °C °C Document Number: DS_D1411064 Version: B14 TSF40H100C thru TSF40H200C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE SUFFIX TSF40HXXXC (Note 1) C0 G Note 1: "XXX" defines voltage from 100V (TSF40H100C) to 200V (TSF40H200C) PACKAGE ITO-220AB PACKING 50 / Tube EXAMPLE PREFERRED PART NO. TSF40H120C C0G PART NO. TSF40H120C PACKING CODE C0 PACKING CODE SUFFIX G DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 50 TSF40H100C~120C 40 30 TSF40H150C~200C 20 WITH HEATSINK 3in x 5in x 0.25in 10 Al-Plate 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2- TYPICAL FORWARD CHARACTERISTICS 100 TSF40H100C TJ=150°C 10 TJ=125°C TJ=100°C 1 0.1 0 TJ=25°C 0.2 0.4 0.6 FORWARD VOLTAGE (V) 0.8 25C 100C 125C 150C Fig 3: VF fo 25C 100C 125C 150C Fig 3: VF fo 1 INSTANTANEOUS FORWARD CURRENT (A) FIG. 3- TYPICAL FORWARD CHARACTERISTICS 100 TSF40H120C TJ=150°C 10 TJ=125°C 1 TJ=100°C 0.1 0 TJ=25°C 0.2 0.4 0.6 FORWARD VOLTAGE (V) 0.8 Document Number: DS_D1411064 1 INSTANTANEOUS FORWARD CURRENT (A) FIG. 4- TYPICAL FORWARD CHARACTERISTICS 100 TSF40H150C TJ=150°C 10 TJ=125°C 1 0.1 0 TJ=100°C TJ=25°C 0.2 0.4 0.6 FORWARD VOLTAGE (V) 0.8 1 Version: B14 INSTANTANEOUS FORWARD CURRENT (A) FIG. 6- TYPICAL FORWARD CHARACTERISTICS 100 TSF40H200C TJ=150°C 10 TJ=125°C 1 TJ=100°C INSTANTANEOUS REVERSE CURRENT (mA) 0.1 0 TJ=25°C 0.2 0.4 0.6 FORWARD VOLTAGE (V) 0.8 1 FIG. 7- TYPICAL REVERSE CHARACTERISTICS 100 TSF40H120C 10 TJ=150°C 1 TJ=125°C TJ=100°C 0.1 0.01 0.001 0.0001 10 TJ=25°C 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 INSTANTANEOUS REVERSE CURRENT (mA) FIG. 9- TYPICAL REVERSE CHARACTERISTICS 100 TSF40H200C 10 1 0.1 0.01 TJ=150°C TJ=125°C TJ=100°C 0.001 0.0001 10 TJ=25°C 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 Document Number: DS_D1411064 JUNCTION CAPACITANCE (pF) A INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) TSF40H100C thru TSF40H200C Taiwan Semiconductor FIG. 7- TYPICAL REVERSE CHARACTERISTICS 100 TSF40H100C 10 TJ=150°C TJ=125°C 1 TJ=100°C 0.1 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 100 10 1 0.1 0.01 FIG. 8- TYPICAL REVERSE CHARACTERISTICS TSF40H150C TJ=150°C TJ=125°C TJ=100°C 0.001 0.0001 10 TJ=25°C 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 10000 FIG. 10- TYPICAL JUNCTION CAPACITANCE TSF40H100C f=1.0MHz Vsig=50mVp-p 1000 100 TSF40H120C TSF40H150C TSF40H200C 10 0.1 1 10 REVERSE VOLTAGE (V) 100 Version: B14 PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM P/N G YWW F = Specific Device Code = Green Compound = Date Code = Factory Code TSF40H100C thru TSF40H200C Taiwan Semiconductor DIM. A B C D E F G H I J K L M N O Unit.


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