Document
Trench Schottky Rectifier
FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters.
TSF40H100C thru TSF40H200C
Taiwan Semiconductor
ITO-220AB
MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF40H 100C
TSF40H 120C
TSF40H 150C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
per device per diode
VRRM IF(AV)
100
120 150 40 20
Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
250
Voltage rate of change (Rated VR)
Instantaneous forward voltage per diode ( Note1 )
IF = 10A IF = 20A IF = 10A IF = 20A
Instantaneous reverse current per diode at rated reverse voltage
TJ = 25°C
TJ = 125°C TJ = 25°C TJ = 125°C
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
dV/dt
VF
VF
IR RθJC TJ TSTG
10000
TYP. MAX.
0.56
-
0.66 0.72
0.48
-
0.59 0.65
- 500
15 45
TYP. 0.60 0.74 0.53 0.63
15
MAX. TYP. - 0.71
0.84 0.79 - 0.59
0.71 0.67 500 45 3
3 - 55 to +150 - 55 to +150
MAX. -
0.89 -
0.77 150 15
TSF40H 200C
200
TYP. 0.75 0.83 0.62 0.70
3
MAX. -
0.93 -
0.80 150 15
UNIT V A
A V/μs
V
μA mA °C/W °C °C
Document Number: DS_D1411064
Version: B14
TSF40H100C thru TSF40H200C
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE SUFFIX
TSF40HXXXC (Note 1)
C0
G
Note 1: "XXX" defines voltage from 100V (TSF40H100C) to 200V (TSF40H200C)
PACKAGE ITO-220AB
PACKING 50 / Tube
EXAMPLE PREFERRED PART NO.
TSF40H120C C0G
PART NO. TSF40H120C
PACKING CODE C0
PACKING CODE SUFFIX
G
DESCRIPTION Green compound
RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted)
AVERAGE FORWARD CURRENT (A)
FIG.1- FORWARD CURRENT DERATING CURVE
50
TSF40H100C~120C 40
30 TSF40H150C~200C
20 WITH HEATSINK 3in x 5in x 0.25in
10 Al-Plate
0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2- TYPICAL FORWARD CHARACTERISTICS 100
TSF40H100C
TJ=150°C 10
TJ=125°C
TJ=100°C 1
0.1 0
TJ=25°C
0.2 0.4 0.6 FORWARD VOLTAGE (V)
0.8
25C 100C 125C 150C
Fig 3: VF fo
25C 100C 125C 150C
Fig 3: VF fo
1
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3- TYPICAL FORWARD CHARACTERISTICS 100
TSF40H120C
TJ=150°C 10
TJ=125°C
1 TJ=100°C
0.1 0
TJ=25°C
0.2 0.4 0.6 FORWARD VOLTAGE (V)
0.8
Document Number: DS_D1411064
1
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 4- TYPICAL FORWARD CHARACTERISTICS 100
TSF40H150C
TJ=150°C
10 TJ=125°C
1
0.1 0
TJ=100°C
TJ=25°C
0.2 0.4 0.6 FORWARD VOLTAGE (V)
0.8
1
Version: B14
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 6- TYPICAL FORWARD CHARACTERISTICS 100
TSF40H200C
TJ=150°C 10
TJ=125°C
1 TJ=100°C
INSTANTANEOUS REVERSE CURRENT (mA)
0.1 0
TJ=25°C
0.2 0.4 0.6 FORWARD VOLTAGE (V)
0.8
1
FIG. 7- TYPICAL REVERSE CHARACTERISTICS 100
TSF40H120C
10 TJ=150°C
1 TJ=125°C
TJ=100°C 0.1
0.01
0.001
0.0001 10
TJ=25°C
20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 9- TYPICAL REVERSE CHARACTERISTICS 100
TSF40H200C
10
1 0.1 0.01
TJ=150°C TJ=125°C TJ=100°C
0.001
0.0001 10
TJ=25°C 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
Document Number: DS_D1411064
JUNCTION CAPACITANCE (pF) A
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
TSF40H100C thru TSF40H200C
Taiwan Semiconductor
FIG. 7- TYPICAL REVERSE CHARACTERISTICS
100 TSF40H100C
10 TJ=150°C
TJ=125°C 1
TJ=100°C 0.1
0.01
0.001
TJ=25°C
0.0001 10
20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
100 10 1 0.1
0.01
FIG. 8- TYPICAL REVERSE CHARACTERISTICS TSF40H150C
TJ=150°C TJ=125°C TJ=100°C
0.001
0.0001 10
TJ=25°C 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
10000
FIG. 10- TYPICAL JUNCTION CAPACITANCE
TSF40H100C
f=1.0MHz Vsig=50mVp-p
1000 100
TSF40H120C TSF40H150C
TSF40H200C
10 0.1
1 10 REVERSE VOLTAGE (V)
100
Version: B14
PACKAGE OUTLINE DIMENSIONS ITO-220AB
MARKING DIAGRAM
P/N G YWW F
= Specific Device Code = Green Compound = Date Code = Factory Code
TSF40H100C thru TSF40H200C
Taiwan Semiconductor
DIM.
A B C D E F G H I J K L M N O
Unit.