KTC4377

SEMICONDUCTOR TECHNICAL DATA KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES High DC Current Gain and Excellent hFE Linearity : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). Small Flat Package. 1W (Mounted on Ceramic Substrate). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note 1) Base Current DC Pulse (Note 1) Collector Power Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IB IBP PC PC* Tj 30 30 10 6 2 4 0.4 0.8 500 1 150 Storage Temperature Range Tstg -55 150 Note 1 : Pulse Width 10mS, Duty Cycle 30% PC* : KTC4377 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V A A mW W J B ES AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation-Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification A:140~240, IC...