RoHS KTC4377
KTC4377 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM: ...
RoHS KTC4377
KTC4377
TRANSISTOR (
NPN)
DFEATURES Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM: 2 Collector-base voltage
A
OV(BR)CBO:
30 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency JCollector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE
fT
Cob
Test conditions
Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30 V 10 V 6V
0.1 µA 0.1 µA 140 600 70 0.5 V 1.5 V 150 MHz 27 pF
ECLASSIFICATION OF hFE(1)
WRank
ABCD
Range
140-240
200-330
300-450
420-600
Marking
SA SB SC SD
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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