SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE(2)=25(Min.) at VCE=6V, IC=400mA. ᴌComplementary to KTA2015.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 35 30 5 500 50 100 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
A J G
KTC4076
EPITAXIAL PLANAR
NPN TRANSISTOR
C L
E
MB
M
2 1
NK
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25 +_ 0.15
C 0.90 +_ 0.10 3 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70 H M 0.42+_ 0.10
N 0.10 MIN N
1. EMITTER 2. BASE 3. COLLECTOR
USM
Marking
W
Type Name hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT
VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=6V, IC=20mA
Collector Output Capacitance
Cob VCB=6V, IE=0, f=1MHz
(Note) : hFE(1) Classification O(2):70ᴕ140 Y(4):120ᴕ240 hFE(2) Classification O:25Min. Y:40Min.
2001. 11. 30
Revision No : 2
MIN. 70 25 -
TYP. 0.1 0.8
300 7.0
MAX. 0.1 0.1 240 0.25 1.0 -
UNIT ỌA ỌA
V V MHz pF
1/1
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