KTA2015

PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation.(PC=100mW) z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. Pb Lead-free Production specification KTA2015 APPLICATIONS z General purpose application and switching application. ORDERING INFORMATION Type No. Marking KTA2015 ZO/ZY SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -500 PC Collector Dissipation 100 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F048 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor KTA2015 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 -35 -30 -5 V V V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA Emitter cut-off current IEBO DC current gain hFE Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob CLASSIFICANTION OF hFE VEB=-5V,IC=0 VCE=-1V,IC=-100mA VCE=-6V,IC=-400mA IC=-100mA, IB=-10mA 70 25 VCE=-6V, IC= -20mA VCB=-6V,IE=0,f=1MHz -0.1 μA 240 -0.1 -0.25 V 200 MHz ...