KTA2015

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌExcellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. ᴌComplementary to KTC4076. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -30 -5 -500 -50 100 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ A J G KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR C L E MB M 2 1 NK DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 3 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.10 MIN N 1. EMITTER 2. BASE 3. COLLECTOR USM Marking Z Type Name hFE Rank ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA Collector Output Capacitance Cob VCB=-6V, IE=0, f=1MHz (Note) : hFE(1) Classification O(2):70ᴕ140 Y(4):120ᴕ240 hFE(2) Classification O:25Min. Y:40Min. MIN. 70 25 - TYP. - -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 - UNIT ỌA ỌA V V MHz pF 1998. 12. 4 Revis...