RoHS KTA2015
SOT-323
KTA2015 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM: 0.1 W (Tamb=25℃)
.,LCollector curre...
RoHS KTA2015
SOT-323
KTA2015
TRANSISTOR (
PNP)
DFEATURES Power dissipation
TPCM: 0.1 W (Tamb=25℃)
.,LCollector current
ICM: -0.5 Collector-base voltage
A
OV(BR)CBO:
-35 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1. BASE 2. EMITTER
3. COLLECTOR
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage OCollector-emitter breakdown voltage
Emitter-base breakdown voltage
RCollector cut-off current TEmitter cut-off current CDC current gain LECollector-emitter saturation voltage EBase-emitter voltage
Transition frequency
JCollector output capacitance
Symbol
Test conditions
MIN TYP MAX UNIT
V(BR)CBO
Ic=-100µA, IE=0
-35
V
V(BR)CEO
Ic=-1mA, IB=0
-30
V
V(BR)EBO
IE=-100µA, IC=0
-5
V
ICBO VCB=-35V, IE=0
-0.1 µA
IEBO VEB=-5V, IC=0
-0.1 µA
hFE(1) hFE(2) VCE(sat)
VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA
IC=-100mA, IB=-10mA
O Y
70
25 40
240 -0.25 V
VBE VCE=-1V, IC=-100mA
-1 V
fT VCE=-6V, IC=-20mA
200 MHz
Cob VCB=-6V, IE=0, f=1MHz
13 pF
ECLASSIFICATION OF hFE(1) WRank
O
Y
Range
70-140
120-240
Marking
ZO
ZY
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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