KTA2015

RoHS KTA2015 SOT-323 KTA2015 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 0.1 W (Tamb=25℃) .,LCollector current ICM: -0.5 Collector-base voltage A OV(BR)CBO: -35 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER 3. COLLECTOR ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage Emitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain LECollector-emitter saturation voltage EBase-emitter voltage Transition frequency JCollector output capacitance Symbol Test conditions MIN TYP MAX UNIT V(BR)CBO Ic=-100µA, IE=0 -35 V V(BR)CEO Ic=-1mA, IB=0 -30 V V(BR)EBO IE=-100µA, IC=0 -5 V ICBO VCB=-35V, IE=0 -0.1 µA IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) hFE(2) VCE(sat) VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA O Y 70 25 40 240 -0.25 V VBE VCE=-1V, IC=-100mA -1 V fT VCE=-6V, IC=-20mA 200 MHz Cob VCB=-6V, IE=0, f=1MHz 13 pF ECLASSIFICATION OF hFE(1) WRank O Y Range 70-140 120-240 Marking ZO ZY WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...