SEMICONDUCTOR
TECHNICAL DATA
KTA1666
EPITAXIAL PLANAR PNP TRANSISTOR
30Ω J
BW E
POWER AMPLIFIER APPLICATIONS. POWER S...
SEMICONDUCTOR
TECHNICAL DATA
KTA1666
EPITAXIAL PLANAR
PNP TRANSISTOR
30Ω J
BW E
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES ᴌLow Saturation Voltage
: VCE(sat)=-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.) ᴌPC=1ᴕ2W (Mounted on Ceramic Substrate) ᴌSmall Flat Package. ᴌComplementary to KTC4379.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IB PC PC * Tj
-50 -50 -5 -2 -0.4 500 1 150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTA1666 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V A A mW W ᴱ ᴱ
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10
4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO V(BR)CEO hFE (1) (Note2) hFE (2) VCE(sat) VBE(sat) fT Cob
VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-0.5A (Note 1) VCE=-2V, IC=-1.5A (Note 1) IC=-1A, IB=-0.05A (Note 1) IC=-1A, IB=...