KTA1666

TRANSISTOR (PNP) FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application KTA1666 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -50 -50 -5 -2 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE(1)* hFE(2)* VCE=-2V, IC=-500mA VCE=-2V, IC=-1.5A 70 40 240 Collector-emitter saturation voltage VCE(sat)* IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat)* IC=-1A,IB=-50mA -1.2 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 40 pF Transition frequency fT VCE=-2V,IC= -500mA 120 MHz *Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK RANGE O 70–140 Y 120–240 MARKING WO WY JinYu semiconductor www.htsemi.com ...