KTA1664

KTA1664 TRANSISTOR (PNP) FEATURES z Complementary to KTC4376 z Small Flat Package z High Current Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -35 -30 -5 -800 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol Test conditions Min Typ Max Unit V(BR)CBO IC= -1mA,IE=0 -35 V V(BR)CEO IC=-10mA,IB=0 -30 V V(BR)EBO IE=-1mA,IC=0 -5 V ICBO VCB=-35V,IE=0 -100 nA IEBO VEB=-5V,IC=0 -100 nA hFE VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA 100 35 320 VCE(sat) IC=-500mA,IB=-20mA -0.7 V VBE VCE=-1V, IC=-10mA -0.5 -0.8 V Cob VCB=-10V,IE=0, f=1MHz 19 pF fT VCE=-5V,IC= -10mA 120 MHz CLASSIFICATION OF hFE RANK RANGE MARKING O 100–200 RO Y 160–320 RY JinYu semiconductor www.htsemi.com ...