KTA1664

J BR E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTC4376. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj -35 -30 -5 -800 -160 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTA1664 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTA1664 EPITAXIAL PLANAR PNP TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification O:100ᴕ200, Y:160ᴕ320 TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz 1998. 6. 15 Revision No : 2 MIN. - -30 100 35 -0.5 - TYP. - 120 19 MAX. -100 -100...