SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. C...
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTC4375. Suffix U : Qualified to AEC-Q101. ex) KTA1663-Y-RTF/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
VCBO
-30
VCEO
-30
VEBO
-5
IC
-1.5
IB
-0.3
PC
500
PC*
1
Thermal Resistance
Rth(j-c)
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
PC* : KTA1663 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V A A
mW W /W
KTA1663
EPITAXIAL PLANAR
PNP TRANSISTOR
A H
L M
C G
E
J B
N D
D K
FF
123
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10
4.25 MAX 1.50+_ 0.10
0.40 TYP 1.75 MAX
0.75 MIN
0.5+0.10/-0.05 1.40 +_ 0.10 0.19 +_ 0.10 0.47 +_ 0.10
SOT-89
Marking
hFE Rank
Type Name
Lot No.
H
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT
Collector Output Capacitance
Cob
Note : hFE Classification O:100 200, Y:160 320
TEST CONDITION VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE...
