BCX55

SMD Type Transistors NPN Medium Power Transistors BCX54,BCX55,BCX56 Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BCX54 BCX55 BCX56 Collector-emitter voltage BCX54 BCX55 BCX56 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to solder point Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) Rating 45 60 100 45 60 80 5 1 1.5 0.2 1.3 -65 to +150 150 -65 to +150 94 14 Unit V V V V V V V A A A W K/W K/W www.kexin.com.cn 1 SMD Type Transistors BCX54,BCX55,BCX56 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain BCX54-10,BCX55-10,BCX56-10 BCX54-16,BCX55-16,BCX56-16 Collector-emitter saturation voltage Base to emitter voltage Transition frequency DC current gain ratio of the complementary pairs Symbol Testconditons ICBO VCB = 30 V, IE = 0 VCB = 30 V, IE = 0; Tj = 125 IEBO VEB = 5 V, IC = 0 hFE IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V IC = 500 mA; VCE = 2 V hFE IC = 150 mA; VCE = 2 V IC = 150 mA; VCE = 2 V VCE(sat) IC = 500 mA; IB = 50 mA VBE IC = 500 mA; VCE = 2 V fT IC = 10 mA; VCE = 5 V; f = 100 MHz hFE IC = 150 mA; VCE = 2V hFE Min Typ Max Unit 100 nA 10 ìA 100 nA 63...