RoHS BCX54
BCX54 TRANSISTOR (NPN)
DFEATURES TPower dissipation
PCM:
.,LCollector current ICM: Collector-base voltage
V...
RoHS BCX54
BCX54
TRANSISTOR (
NPN)
DFEATURES TPower dissipation
PCM:
.,LCollector current ICM: Collector-base voltage
V(BR)CBO:
0.5 1 45
W (Tamb=25℃) A V
OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage
Collector cut-off current
TEmitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
Test conditions Ic=100µA , IE=0 IC= 10mA , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0
MIN MAX UNIT 45 V 45 V 5V
0.1 µA 0.1 µA
LECDC current gain
BCX54 BCX54-10 BCX54-16
ECollector-emitter saturation voltage JBase-emitter voltage WETransition frequency
hFE (1)
VCE=2V, IC= 150mA
63 250 63 160 100 250
hFE(2) hFE(3)
VCE=2V, IC= 5mA VCE=2V, IC= 500mA
40 25
VCE(sat) IC=500 mA, IB= 50mA
0.5
VBE(ON)
IC= 500 mA, VCE=2V
1
V V
VCE= 10V, IC= 50mA
fT
f = 100MHz
130
MHz
DEVICE MARKING
BCX54=BA BCX54-10=BC BCX54-16=BD
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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