AUIRFS4127

Features  Advanced Process Technology  Ultra Low On-Resistance 175°C Operating Temperature Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.  D G S D AUIRFS4127 AUIRFSL4127 HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 200V 18.6m 22m 72A D S G D2Pak AUIRFS4127 G Gate D Drain S D G TO-262 AUIRFSL4127 S Source Base part number AUIRFSL4127 AUIRFS4127 Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRFSL4127 AUIRFS4127 AUIRFS4127TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resis...