ACE1551A

ACE1551A N-Channel Enhancement Mode MOSFET Description The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Features N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V 20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter VER 1.3 1 ACE1551A N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ VGSS ID ±12 0.65 V A Pulsed Drain Current IDM 4 A Continuous Source Current (Diode Conduction) IS 0.3 A Power Dissipation TA=25℃ PD 0.15 W Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type SOT-723 D D G GS Ordering information ACE1551A JM + H Halogen -...