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SKI10297

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N-channel Trench Power MOSFET


Description
100 V, 34 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10297 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 34 A  RDS(ON) -------- 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)  Low Total Gate Charge  High Speed...



Sanken

SKI10297

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