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SKI10123

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N-channel Trench Power MOSFET


Description
100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 66 A  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)  Low Total Gate Charge  High Speed ...



Sanken

SKI10123

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