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HFU630

N-Channel MOSFET

Description

HFD630_HFU630 Dec 2012 HFD630 / HFU630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 7.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area ...

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