DMN3900UFA

Product Summary V(BR)DSS 30V RDS(on) 760m @ VGS = 4.5V 930m @ VGS = 2.5V 1500mΩ @ VGS = 1.8V ID TA = +25°C 0.65A 0.58A 0.45A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load switch  Portable applications  Power Management Functions DMN3900UFA 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features  0.4mm ultra low profile package for thin application  0.48mm2 package footprint, 16 times smaller than SOT23  Low VGS(th), can be driven directly from a battery  Low RDS(on)  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: X2-DFN0806-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.00043 grams (approximate) ESD PROTECTED X2-DFN0806-3 Bottom View Drain S D G Top View Package Pin Configuration Gate Body Diode Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN3900UFA-7B Marking NU Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 Notes: 1. No purposely added lead. Fully EU Direc...