DMN3190LDW

DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ VGS = 4.5V Package SOT363 ID (MAX) TA = +25°C 1A 0.75A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  Power Management Functions  Load Switch SOT363 Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SOT363  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.006 grams (Approximate) D1 D1 G2 S2 G1 ESD PROTECTED Top View Gate Protection Diode S1 Q1 N-Channel Q2 N-Channel S1 G1 D2 Top View Pin Out Ordering Information (Note 4) No...