CMPT6520

CMPT6517 NPN CMPT6520 PNP SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6517 and CMPT6520 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications. MARKING CODES: CMPT6517: C1Z CMPT6520: C2Z SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJA 350 350 5.0 500 250 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO IEBO IEBO BVCBO BVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE VCB=250V VEB=5.0V (CMPT6517) VEB=4.0V (CMPT6520) IC=100µA IC=1.0mA IE=10µA (CMPT6517) IE=10µA (CMPT6520) IC=10mA, IB=1.0mA IC=20mA, IB=2.0mA IC=30mA, IB=3.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=20mA, IB=2.0mA IC=30mA, IB=3.0mA IC=10V, IC=100mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA 350 350 6.0 5.0 20 30 MAX 50 50 50 0.30 0.35 0.50 1.0 0.75 0.85 0.90 2.0 UNITS V V V mA mA mW °C °C/W UNITS nA nA nA V V V V V V V V V V V V R5 (1-February 2010) CMPT6517 NPN CMPT6520 PNP SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS ELECTR...