CMPT2222AE

CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 75V min to 100V min. (145V TYP) ♦ VCE from 1.0V max to 0.5V max. (0.12V TYP) ♦ hFE from 40 to 60 min. (130 TYP) MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 100 45 6.0 600 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=60V ICBO VCB=60V, TA=125°C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V ♦ BVCBO ♦ BVCEO IC=10µA IC=10mA 100 145 45 53 BVEBO ♦ VCE(SAT) ♦ VCE(SAT) IE=10μA IC=150mA, IB=15mA IC=500mA, IB=50mA 6.0 0.092 0.12 VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) ♦ hFE ♦ hFE ♦ hFE ♦ hFE IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA 100 210 100 205 100 205 75 150 hFE VCE=10V, IC=150mA 100 ♦ hFE VCE=10V, IC=500mA 60 130 fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB=10V, IE=0, f=1.0MHz ...