Document
TST30L100CW thru TST30L200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters.
TO-220AB
MECHANICAL DATA
Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
per device per diode
SYMBOL VRRM IF(AV)
TST30L 100CW
100
TST30L
TST30L
120CW
150CW
120 150
30
15
TST30L 200CW
200
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode
IFSM
200
Voltage rate of change (Rated VR)
dV/dt
Instantaneous forward voltage per diode (Note1)
IF = 15A IF = 15A
Instantaneous reverse current per diode at rated reverse voltage
Typical thermal resistance per diode
TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C
Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width=300μs, 1% duty cycle
VF
IR
RθJC RθJL TJ TSTG
10000 TYP MAX TYP MAX TYP MAX TYP MAX 0.76 0.82 0.82 0.88 0.84 0.92 0.86 0.96 0.65 0.71 0.67 0.75 0.70 0.78 0.73 0.81
200 - 200 - 100 - 100 6 20 6 20 3 15 3 15
2.5 2.8
3.5 3.8 - 55 to +150 - 55 to +150
UNIT V A
A V/μs
V
μA mA °C/W °C/W °C °C
Document Number: DS_D1411085
Version: B14
TST30L100CW thru TST30L200CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKING CODE SUFFIX
PACKAGE
TST30LXXXCW (Note 1)
C0
G
TO-220AB
Note 1: "XXX" defines voltage from 100V (TST30L100CW) to 200V (TST30L200CW)
PACKING 50 / Tube
EXAMPLE
PREFERRED PART NO.
TST30L120CW C0G
PART NO. TST30L120CW
PACKING CODE C0
PACKING CODE SUFFIX G
DESCRIPTION Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
AVERAGE FORWARD CURRENT (A)
FIG. 1 FORWARD CURRENT DERATING CURVE 35
TST30L100CW TST30L120CW 30
25
20 TST30L150CW TST30L200CW
15
10 WITH HEATSINK 3in x 5in x 0.25in
5 Al-Plate
0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100 TST30L100CW
10 TJ=150oC
TJ=125oC 1
TJ=100oC
0.1 TJ=25oC
0.01 0.0
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1.0
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100 TST30L120CW
10 TJ=150oC
1 TJ=125oC
TJ=100oC 0.1
TJ=25oC
0.01 0
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100 TST30L150CW
10
1
0.1
0.01 0
TJ=150oC TJ=125oC
TJ=100oC
TJ=25oC
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
Document Number: DS_D1411085
Version: B14
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
100 TST30L200CW
10 TJ=150oC
1 TJ=125oC
0.1
0.01 0
TJ=100oC
TJ=25oC
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100 TTSSTT3300HL12200CCWW
10
1 0.1 0.01
TJ=150oC TJ=125oC TJ=100oC
0.001 0.0001
TJ=25oC
0.00001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100 TST30L200CW
10
1 0.1 0.01
TJ=150oC TJ=125oC TJ=100oC
0.001
0.0001
0.00001 10
TJ=25oC
20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411085
JUNCTION CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
TST30L100CW thru TST30L200CW
Taiwan Semiconductor
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100 TST30L100CW
10 TJ=150oC
1 TJ=125oC
TJ=100oC 0.1
0.01
0.001 0.0001
TJ=25oC
0.00001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100 TST30L150CW
10
1 0.1 0.01
TJ=150oC TJ=125oC TJ=100oC
0.001
0.0001
TJ=25oC
0.00001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10000
FIG. 10 TYPICAL JUNCTION CAPACTIANCE
TST30L100CW
f=1.0MHz Vsig=50mVp-p
1000
TST30L120CW
100
10 0.1
TST30L200CW
TST30L150CW
1 10 REVERSE VOLTAGE (V)
100
Version: B14
PACKAGE OUTLINE DIMENSIONS TO-220AB
TST30L100CW thru TST30L200CW
Taiwan Semiconductor
DIM.
A B C D E F G H I J K L M N
Unit (mm)
Min -
2.54 2.80 0.68 3.54 14.60 13.19 2.41 4.42 1.14 5.84 2.20 0.35 0.95
Max 10.50 3.44 4.20 0.94 4.00 16.00 14.79 2.67 .