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TST30L120CW Dataheets PDF



Part Number TST30L120CW
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Trench Schottky Rectifier
Datasheet TST30L120CW DatasheetTST30L120CW Datasheet (PDF)

TST30L100CW thru TST30L200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power .

  TST30L120CW   TST30L120CW


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TST30L100CW thru TST30L200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) TST30L 100CW 100 TST30L TST30L 120CW 150CW 120 150 30 15 TST30L 200CW 200 Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode IFSM 200 Voltage rate of change (Rated VR) dV/dt Instantaneous forward voltage per diode (Note1) IF = 15A IF = 15A Instantaneous reverse current per diode at rated reverse voltage Typical thermal resistance per diode TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width=300μs, 1% duty cycle VF IR RθJC RθJL TJ TSTG 10000 TYP MAX TYP MAX TYP MAX TYP MAX 0.76 0.82 0.82 0.88 0.84 0.92 0.86 0.96 0.65 0.71 0.67 0.75 0.70 0.78 0.73 0.81 200 - 200 - 100 - 100 6 20 6 20 3 15 3 15 2.5 2.8 3.5 3.8 - 55 to +150 - 55 to +150 UNIT V A A V/μs V μA mA °C/W °C/W °C °C Document Number: DS_D1411085 Version: B14 TST30L100CW thru TST30L200CW Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE SUFFIX PACKAGE TST30LXXXCW (Note 1) C0 G TO-220AB Note 1: "XXX" defines voltage from 100V (TST30L100CW) to 200V (TST30L200CW) PACKING 50 / Tube EXAMPLE PREFERRED PART NO. TST30L120CW C0G PART NO. TST30L120CW PACKING CODE C0 PACKING CODE SUFFIX G DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG. 1 FORWARD CURRENT DERATING CURVE 35 TST30L100CW TST30L120CW 30 25 20 TST30L150CW TST30L200CW 15 10 WITH HEATSINK 3in x 5in x 0.25in 5 Al-Plate 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TST30L100CW 10 TJ=150oC TJ=125oC 1 TJ=100oC 0.1 TJ=25oC 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1.0 INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 TST30L120CW 10 TJ=150oC 1 TJ=125oC TJ=100oC 0.1 TJ=25oC 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 INSTANTANEOUS FORWARD CURRENT (A) FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 TST30L150CW 10 1 0.1 0.01 0 TJ=150oC TJ=125oC TJ=100oC TJ=25oC 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 Document Number: DS_D1411085 Version: B14 INSTANTANEOUS FORWARD CURRENT (A) FIG. 5 TYPICAL FORWARD CHARACTERISTICS 100 TST30L200CW 10 TJ=150oC 1 TJ=125oC 0.1 0.01 0 TJ=100oC TJ=25oC 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 FIG. 7 TYPICAL REVERSE CHARACTERISTICS 100 TTSSTT3300HL12200CCWW 10 1 0.1 0.01 TJ=150oC TJ=125oC TJ=100oC 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) FIG. 9 TYPICAL REVERSE CHARACTERISTICS 100 TST30L200CW 10 1 0.1 0.01 TJ=150oC TJ=125oC TJ=100oC 0.001 0.0001 0.00001 10 TJ=25oC 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1411085 JUNCTION CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) TST30L100CW thru TST30L200CW Taiwan Semiconductor FIG. 6 TYPICAL REVERSE CHARACTERISTICS 100 TST30L100CW 10 TJ=150oC 1 TJ=125oC TJ=100oC 0.1 0.01 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 8 TYPICAL REVERSE CHARACTERISTICS 100 TST30L150CW 10 1 0.1 0.01 TJ=150oC TJ=125oC TJ=100oC 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10000 FIG. 10 TYPICAL JUNCTION CAPACTIANCE TST30L100CW f=1.0MHz Vsig=50mVp-p 1000 TST30L120CW 100 10 0.1 TST30L200CW TST30L150CW 1 10 REVERSE VOLTAGE (V) 100 Version: B14 PACKAGE OUTLINE DIMENSIONS TO-220AB TST30L100CW thru TST30L200CW Taiwan Semiconductor DIM. A B C D E F G H I J K L M N Unit (mm) Min - 2.54 2.80 0.68 3.54 14.60 13.19 2.41 4.42 1.14 5.84 2.20 0.35 0.95 Max 10.50 3.44 4.20 0.94 4.00 16.00 14.79 2.67 .


TST30L100CW TST30L120CW TST30L150CW


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