TST30H100CW thru TST30H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky techno...
TST30H100CW thru TST30H200CW
Taiwan Semiconductor
Trench
Schottky Rectifier
FEATURES
- Patented Trench
Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench
Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" menas green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
per device per diode
SYMBOL VRRM IF(AV)
TST30H 100CW
100
TST30H TST30H
120CW 120
150CW 150
30
15
TST30H 200CW
200
Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
200
Voltage rate of change (Rated VR)
dV/dt
Instantaneous forward voltage per diode (Note1)
IF = 15A
TJ = 25°C TJ = 125°C
VF
Instantaneous reverse current per diode at rated reverse v...