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KBJ410G Dataheets PDF



Part Number KBJ410G
Manufacturers YS
Logo YS
Description 4.0A GLASS PASSIVATED BRIDGE RECTIFIER
Datasheet KBJ410G DatasheetKBJ410G Datasheet (PDF)

DATA SHEET SEMICONDUCTOR KBJ4005G THRU KBJ410G 4.0A GLASS PASSIVATED BRIDGE RECTIFIER FEATURES Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS H Low Reverse Leakage Current Surge Overload Rating to 120A Peak C Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 E UL Listed Under Recognized Component Index, File Number E94661 High temperature soldering : 260OC / 10 seconds at terminals Pb free product at a.

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DATA SHEET SEMICONDUCTOR KBJ4005G THRU KBJ410G 4.0A GLASS PASSIVATED BRIDGE RECTIFIER FEATURES Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS H Low Reverse Leakage Current Surge Overload Rating to 120A Peak C Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 E UL Listed Under Recognized Component Index, File Number E94661 High temperature soldering : 260OC / 10 seconds at terminals Pb free product at available : 99% Sn above meet RoHS environment substance directive request KBJ(mm) A _ BL KJ D G P N M R MECHANICAL DATA Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Approx. Weight: 4.6 grams Marking: Type Number Maximum Ratings and Electrical Characteristics @ TA = 25 Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. C unless otherwise specified KBJ Dim Min Max A 24.80 25.20 B 14.70 15.30 C 400 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 3.40 J 3.30 3.70 K 1.90 2.10 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm Characteristic KBJ KBJ KBJ KBJ KBJ Symbol 4005G 401G 402G 404G 406G Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 50 100 200 400 600 DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 35 70 140 280 420 Average Rectified Output Current @ TC = 100 C IO 4.0 Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load IFSM 150 (JEDEC method) Forward Voltage per element @ IF = 4.0A VFM 1.0 Peak Reverse Current @TC = 25 C at Rated DC Blocking Voltage @ TC = 125 C IRM 5.0 500 Typical Junction Capacitance per Element (Note 1) CJ 40 Typical Thermal Resistance (Note 2) R JA 5.5 Operating and Storage Temperature Range Tj, TSTG -55 to +150 Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink. KBJ 408G 800 560 KBJ 410G 1000 700 Unit V V A A V A PF /W http://www.yeashin.com 1 REV.02 20120305 IO, AVERAGE RECTIFIED CURRENT (A) DEVICE CHARACTERISTICS KBJ4005G THRU KBJ410G IF, INSTANTANEOUS FORWARD CURRENT (A) 6 10 5 TJ = 150°C 4 1.0 TJ = 25°C 3 2 1 Resistive or Inductive load 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 180 160 120 Single half-sine-wave (JEDEC method) Tj = 150°C 0.1 Pulse width = 300µs 0.01 0 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 f = 1MHz Tj = 25°C 100 80 Cj, JUNCTION CAPACITANCE (pF) 40 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current 1000 100 10 TJ = 150°C TJ = 125°C TJ = 100°C 10 0.1 1.0 10 VR, REVERSE VOLTAGE (V) Fig. .


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