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MCL4148

SEMTECH

SILICON EPITAXIAL PLANAR DIODE

MCL4148 SILICON EPITAXIAL PLANAR DIODE Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 foot...


SEMTECH

MCL4148

File Download Download MCL4148 Datasheet


Description
MCL4148 SILICON EPITAXIAL PLANAR DIODE Features Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the device 1N4148 Micro Melf package Applications Extreme fast switches LS-31 Absolute Maximum Ratings (Tj = 25OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Peak Forward Surge Current Repetitive Peak Forward Current Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range Test - tp = 1μS - VR = 0 - Symbol VRRM VR IFSM IFRM IF IFAV Ptot Tj Ts Value 100 75 2 450 200 150 500 175 -65 … +175 Maximum Thermal Resistance (Tj = 25 OC) Parameter Junction ambient Test Conditions mounted on epoxy-glass hard tissue, 35μm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Unit V V A mA mA mA mW OC OC Unit K/W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/08/2002 MCL4148 Characteristics at Tj = 25 OC Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage Reverse Current Breakdown Voltage IF = 50mA VR = 20V VR = 20V, Tj = 150 OC VR = 75V IR = 100uA, tp/T = 0.01, Tp = 0.3ms VF - 0.86 1 V IR - - 25 nA IR - - 50 μA IR - - 5 μA V(BR) 100 - - V Diode Capacitance Rectification Efficiency Reverse Recovery Time VR = 0, f = 1MHZ, VHF = 50mV VHF = 2V, f = 100MHZ IF = IR = 10mA, Ir A IF = 10mA, VR = 6...




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