SILICON EPITAXIAL PLANAR DIODE
MCL4148
SILICON EPITAXIAL PLANAR DIODE
Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 foot...
Description
MCL4148
SILICON EPITAXIAL PLANAR DIODE
Features Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the device 1N4148 Micro Melf package
Applications Extreme fast switches
LS-31
Absolute Maximum Ratings (Tj = 25OC)
Parameter Repetitive Peak Reverse Voltage Reverse Voltage Peak Forward Surge Current Repetitive Peak Forward Current Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range
Test -
tp = 1μS -
VR = 0 -
Symbol VRRM VR IFSM IFRM IF IFAV Ptot Tj Ts
Value 100 75
2 450 200 150 500 175 -65 … +175
Maximum Thermal Resistance (Tj = 25 OC)
Parameter Junction ambient
Test Conditions mounted on epoxy-glass hard tissue, 35μm copper clad, 0.9 mm2 copper area per electrode
Symbol RthJA
Value 500
Unit V V A mA mA mA
mW OC OC
Unit K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/08/2002
MCL4148
Characteristics at Tj = 25 OC
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Forward Voltage Reverse Current
Breakdown Voltage
IF = 50mA VR = 20V VR = 20V, Tj = 150 OC VR = 75V IR = 100uA, tp/T = 0.01, Tp = 0.3ms
VF - 0.86 1 V
IR -
- 25 nA
IR -
- 50 μA
IR - - 5 μA
V(BR)
100
-
-
V
Diode Capacitance Rectification Efficiency Reverse Recovery Time
VR = 0, f = 1MHZ, VHF = 50mV VHF = 2V, f = 100MHZ IF = IR = 10mA, Ir A IF = 10mA, VR = 6...
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