Document
Gr Pr
STU/D20L01A
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Typ
100V
20A
49 @ VGS=10V 56 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit 100 ±20 20 16.7 58 12 50 35 -55 to 175
3 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Dec,02,2011
www.samhop.com.tw
STU/D20L01A
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=10A VGS=4.5V , ID=9A VDS=10V , ID=10A
VDS=25V,VGS=0V f=1.0MHz
VDD=50V ID=1A VGS=10V RGEN= 6 ohm
VDS=50V,ID=10A,VGS=10V VDS=50V,ID=10A,VGS=4.5V VDS=50V,ID=10A, VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Typ Max Units
1 ±100
V uA nA
1.8 3
V
49 61 m ohm
56 75 m ohm
22 S
1460 88 75
pF pF pF
25 ns 23 ns 66 ns 14 ns 26 nC 13 nC 2.6 nC 9.3 nC
0.79 1.3 V
Dec,02,2011
2 www.samhop.com.tw
RDS(on)(m Ω)
ID, Drain Current(A)
STU/D20L01A
40
VGS=10V 32
VGS=4.5V 24 VGS=4V
16 VGS=3.5V
8 VGS=3V
0 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
180
150
120
90 V GS =4.5V
60 V GS =10V
30
1 1 8 16 24 32 40
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
RDS(on), On-Resistance Normalized
ID, Drain Current(A)
Ver 1.0
25
20 Tj=125 C
15 -55 C
10 25 C
5
0 0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0 1.8 V G S =10V
ID=10A 1.6
1.4
1.2 V G S =4.5V ID=9A
1.0
0 0 25 50 75 100 125 150 Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain Current and Temperature
Vth, Normalized Gate-Source Threshold Voltage
1.6
1.4
V DS =V G S ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation with Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation with Temperature
Dec,02,2011
3 www.samhop.com.tw
STU/D20L01A
RDS(on)(m Ω)
180
ID=10A
150
120 125 C
90 75 C
60 25 C
30
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
1800
1500 1200
Ciss
900
600
300 Coss Crss
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
C, Capacitance(pF)
VGS, Gate to Source Voltage(V)
Is, Source-drain current(A)
20 10
125 C
25 C 75 C
Ver 1.0
1 0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VDS=50V
8
ID=10A
6
4
2
0 0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Switching Time(ns)
500 100
ID, Drain Current(A)
R DS(ON) Limit
10u1s00us 1ms 10msDC
100 10
TD(off )
TD(on) Tf
Tr
VDS=50V,ID=1A VGS=10V
1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
1
0.3 0.1
VGS=10V Single Pulse
TA=25 C
1 10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Dec,02,2011
4 www.samhop.com.tw
STU/D20L01A
Ver 1.0
VDS
L
RG
20V
tp
D.U.T IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit Figure 13a.
V(BR)DSS tp
IAS
Unclamped Inductive Waveforms Figure 13b.
Normalized Transient Thermal Resistance
2
1 D=0.5
0.2
0.1 0.1 0.05
0.02
P DM
t1 t2
0.01
1. R JA(t)=r(t)*R JA
2. R JA=See Datasheet
SINGLE PULSE
3. TJM-TA=PDM*R JA(t)
4..