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STU20L01A Dataheets PDF



Part Number STU20L01A
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet STU20L01A DatasheetSTU20L01A Datasheet (PDF)

Gr Pr STU/D20L01A Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 20A 49 @ VGS=10V 56 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Sou.

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Gr Pr STU/D20L01A Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 20A 49 @ VGS=10V 56 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 100 ±20 20 16.7 58 12 50 35 -55 to 175 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Dec,02,2011 www.samhop.com.tw STU/D20L01A Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V 100 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=10A VGS=4.5V , ID=9A VDS=10V , ID=10A VDS=25V,VGS=0V f=1.0MHz VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=10A,VGS=10V VDS=50V,ID=10A,VGS=4.5V VDS=50V,ID=10A, VGS=10V 1 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=4A Notes a.Surface Mounted on FR4 Board,t <_ 10sec. b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Typ Max Units 1 ±100 V uA nA 1.8 3 V 49 61 m ohm 56 75 m ohm 22 S 1460 88 75 pF pF pF 25 ns 23 ns 66 ns 14 ns 26 nC 13 nC 2.6 nC 9.3 nC 0.79 1.3 V Dec,02,2011 2 www.samhop.com.tw RDS(on)(m Ω) ID, Drain Current(A) STU/D20L01A 40 VGS=10V 32 VGS=4.5V 24 VGS=4V 16 VGS=3.5V 8 VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics 180 150 120 90 V GS =4.5V 60 V GS =10V 30 1 1 8 16 24 32 40 ID, Drain Current(A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage RDS(on), On-Resistance Normalized ID, Drain Current(A) Ver 1.0 25 20 Tj=125 C 15 -55 C 10 25 C 5 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics 2.2 2.0 1.8 V G S =10V ID=10A 1.6 1.4 1.2 V G S =4.5V ID=9A 1.0 0 0 25 50 75 100 125 150 Tj(°C ) Tj, Junction Temperature(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 V DS =V G S ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 6. Breakdown Voltage Variation with Temperature Dec,02,2011 3 www.samhop.com.tw STU/D20L01A RDS(on)(m Ω) 180 ID=10A 150 120 125 C 90 75 C 60 25 C 30 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1800 1500 1200 Ciss 900 600 300 Coss Crss 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance C, Capacitance(pF) VGS, Gate to Source Voltage(V) Is, Source-drain current(A) 20 10 125 C 25 C 75 C Ver 1.0 1 0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VDS=50V 8 ID=10A 6 4 2 0 0 4 8 12 16 20 24 28 32 Qg, Total Gate Charge(nC) Figure 10. Gate Charge Switching Time(ns) 500 100 ID, Drain Current(A) R DS(ON) Limit 10u1s00us 1ms 10msDC 100 10 TD(off ) TD(on) Tf Tr VDS=50V,ID=1A VGS=10V 1 1 6 10 60 100 Rg, Gate Resistance(Ω) Figure 11. switching characteristics 10 1 0.3 0.1 VGS=10V Single Pulse TA=25 C 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Dec,02,2011 4 www.samhop.com.tw STU/D20L01A Ver 1.0 VDS L RG 20V tp D.U.T IAS 0.01 + - VDD Uncamped Inductive Test Circuit Figure 13a. V(BR)DSS tp IAS Unclamped Inductive Waveforms Figure 13b. Normalized Transient Thermal Resistance 2 1 D=0.5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 1. R JA(t)=r(t)*R JA 2. R JA=See Datasheet SINGLE PULSE 3. TJM-TA=PDM*R JA(t) 4..


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