N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2606CMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive...
Description
Advanced Power Electronics Corp.
AP2606CMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink
D
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP2606C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
BVDSS
RDS(ON) ID4
25V 0.8mΩ 280A
D D D D
S S S G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current (Chip), VGS @ 10V4 Drain Current, VGS @ 10V4(Package Limited) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25 +20 280 100 60 50.5 650 104
5 45 -55 to 150 -55 to 150
V V A A A A A W W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Data and specifications su...
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