VN0650

VN0645 VN0650 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 450V 500V † MIL visual screening available RDS(ON) (max) 16Ω 16Ω ID(ON) (min) 0.5A 0.5A High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Order Number / Package TO-39 TO-92 Die† VN0645N2 — — — VN0650N3 VN0650ND 7 Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications s Motor controls s Converters s Amplifiers s Switches...