UFT10040

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 50 V to 600 V VRRM Non Isolated to plate Not ESD Sensitive UFT10005 thru UFT10060 VRRM = 50 V - 600 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 100 200 400 600 35 50 -55 to 150 -55 to 150 70 100 -55 to 150 -55 to 150 140 200 -55 to 150 -55 to 150 280 400 -55 to 150 -55 to 150 420 600 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery time (per leg) Thermal characteristics Maximum thermal resistance, junction - case (per leg) IF(AV) IFSM VF IR Trr RΘJC TC ≤ 125 °C tp = 8.3 ms, half sine IF = 50 A, Tj = 25 °C Tj = 25 °C Tj = 125 °C IF=0.5 A, IR=1.0 A, IRR= 0.25 A 100 1000 1.0 25 3 60 1.0 100 1000 1.0 25 3 60 1.0 100 1000 1.0 25 3 60 1.0 100 1000 1.3 25 3 70 1.0 100 1000 1.7 25 3 90 A A V μA mA ns 1.0 °C/W www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/...