Document
STU03N20
Sa mHop Microelectronics C orp.
STD03N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
3.28 @ VGS=10V 2A
3.59 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit 200 ±20
2 1.6 5.8 4 42 27 -55 to 150
3 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Jun,03,2014
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STU03N20 STD03N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=160V , VGS=0V VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=1A VGS=4.5V , ID=1A VDS=10V , ID=1A
VDS=25V,VGS=0V f=1.0MHz
VDD=100V ID=1A VGS=10V RGEN= 6 ohm VDS=100V,ID=1A,VGS=10V VDS=100V,ID=1A,VGS=4.5V VDS=100V,ID=1A, VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
2 2.62 2.66 3.6
276 16 11
8.2 9.2 17.3 2.7 5 2.8 0.9 1.5
0.84
Max Units
1 ±100
V uA nA
3V 3.28 ohm 3.59 ohm
S
pF pF pF
ns ns ns ns nC nC nC nC
1.3 V
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STU03N20 STD03N20
ID, Drain Current(A)
2.0 VGS=10V
1.6 VGS=4.5V
1.2 VGS=3.5V
0.8
0.4 VGS=3V
0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
4.8
4.0
3.2 V GS =4.5V 2.4 V GS =10V 1.6
0.8
0 0.01
0.4 0.8 1.2 1.6
ID, Drain Current(A)
2.0
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
RDS(on)(Ω)
RDS(on), On-Resistance Normalized
ID, Drain Current(A)
Ver 1.0
1.5
1.2
0.9 Tj=125 C
0.6 25 C -55 C
0.3
0 0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2 V G S =10V ID=1A
1.9
1.6 1.3 V G S =4.5V
ID=1A 1.0
0 0 25 50 75 100 125 150 Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain Current and Temperature
Vth, Normalized Gate-Source Threshold Voltage
1.6
1.4
V DS =V G S ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation with Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90 0.85
-50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation with Temperature
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C, Capacitance(pF)
RDS(on)(Ω)
STU03N20 STD03N20
7.8
ID=1A
6.5 125 C
5.2 75 C
3.9
2.6 25 C
1.3
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
360
300 Ciss
240
180
120 Coss
60 Crss
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
VGS, Gate to Source Voltage(V)
Is, Source-drain current(A)
20.0
10.0 125 C
5.0 25 C 75 C
Ver 1.0
1.0 0
0.40 0.80 1.20 1.60 2.00
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 VDS=100V
8 ID=1A
6
4
2
0 0 1 2 3 4 56 Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Switching Time(ns)
ID, Drain Current(A)
100 10
TD(on)
TD(off ) Tr Tf
10 1 R DS(ON) Limit D1C0ms1ms
1
VDS=100V,ID=1A VGS=10V
0.1 1
10
Rg, Gate Resistance(Ω)
100
Figure 11. switching characteristics
0.1
0.01 0.1
VGS=10V Single Pulse
TC=25 C
1 10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
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STU03N20 STD03N20
Ver 1.0
VDS
L
RG
20V
tp
D.U.T IAS
0.01
+
- VDD
Uncamped Inductive Test Circuit Figure 13a.
V(BR)DSS tp
IAS
Unclamped Inductive Waveforms Figure 13b.
2
1 D =0 . 5
0.2
0.1 0.1 0.05
0.02
P DM
t1 t2
0.01
1. R J JC (t)=r (t) * R J JC
2. R J JC=S ee Datas h.