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STD03N20 Dataheets PDF



Part Number STD03N20
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet STD03N20 DatasheetSTD03N20 Datasheet (PDF)

STU03N20 Sa mHop Microelectronics C orp. STD03N20Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 200V 3.28 @ VGS=10V 2A 3.59 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage.

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STU03N20 Sa mHop Microelectronics C orp. STD03N20Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 200V 3.28 @ VGS=10V 2A 3.59 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=70°C EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 200 ±20 2 1.6 5.8 4 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Jun,03,2014 www.samhop.com.tw STU03N20 STD03N20 Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=160V , VGS=0V VGS= ±20V , VDS=0V 200 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=1A VGS=4.5V , ID=1A VDS=10V , ID=1A VDS=25V,VGS=0V f=1.0MHz VDD=100V ID=1A VGS=10V RGEN= 6 ohm VDS=100V,ID=1A,VGS=10V VDS=100V,ID=1A,VGS=4.5V VDS=100V,ID=1A, VGS=10V 1 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz. Typ 2 2.62 2.66 3.6 276 16 11 8.2 9.2 17.3 2.7 5 2.8 0.9 1.5 0.84 Max Units 1 ±100 V uA nA 3V 3.28 ohm 3.59 ohm S pF pF pF ns ns ns ns nC nC nC nC 1.3 V Jun,03,2014 2 www.samhop.com.tw STU03N20 STD03N20 ID, Drain Current(A) 2.0 VGS=10V 1.6 VGS=4.5V 1.2 VGS=3.5V 0.8 0.4 VGS=3V 0 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics 4.8 4.0 3.2 V GS =4.5V 2.4 V GS =10V 1.6 0.8 0 0.01 0.4 0.8 1.2 1.6 ID, Drain Current(A) 2.0 Figure 3. On-Resistance vs. Drain Current and Gate Voltage RDS(on)(Ω) RDS(on), On-Resistance Normalized ID, Drain Current(A) Ver 1.0 1.5 1.2 0.9 Tj=125 C 0.6 25 C -55 C 0.3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics 2.5 2.2 V G S =10V ID=1A 1.9 1.6 1.3 V G S =4.5V ID=1A 1.0 0 0 25 50 75 100 125 150 Tj(°C ) Tj, Junction Temperature(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 V DS =V G S ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 6. Breakdown Voltage Variation with Temperature Jun,03,2014 3 www.samhop.com.tw C, Capacitance(pF) RDS(on)(Ω) STU03N20 STD03N20 7.8 ID=1A 6.5 125 C 5.2 75 C 3.9 2.6 25 C 1.3 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 360 300 Ciss 240 180 120 Coss 60 Crss 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance VGS, Gate to Source Voltage(V) Is, Source-drain current(A) 20.0 10.0 125 C 5.0 25 C 75 C Ver 1.0 1.0 0 0.40 0.80 1.20 1.60 2.00 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VDS=100V 8 ID=1A 6 4 2 0 0 1 2 3 4 56 Qg, Total Gate Charge(nC) Figure 10. Gate Charge Switching Time(ns) ID, Drain Current(A) 100 10 TD(on) TD(off ) Tr Tf 10 1 R DS(ON) Limit D1C0ms1ms 1 VDS=100V,ID=1A VGS=10V 0.1 1 10 Rg, Gate Resistance(Ω) 100 Figure 11. switching characteristics 0.1 0.01 0.1 VGS=10V Single Pulse TC=25 C 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Jun,03,2014 4 www.samhop.com.tw STU03N20 STD03N20 Ver 1.0 VDS L RG 20V tp D.U.T IAS 0.01 + - VDD Uncamped Inductive Test Circuit Figure 13a. V(BR)DSS tp IAS Unclamped Inductive Waveforms Figure 13b. 2 1 D =0 . 5 0.2 0.1 0.1 0.05 0.02 P DM t1 t2 0.01 1. R J JC (t)=r (t) * R J JC 2. R J JC=S ee Datas h.


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