CJD122

CJD122 NPN CJD127 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 100 100 5.0 8.0 16 120 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=100V, VBE(off)=1.5V ICEV VCE=100V, VBE(off)=1.5V, TC=125°C ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz (CJD122) Cob VCB=10V, IE=0, f=1.0MHz (CJD127) hfe VCE=4.0V, IC=3.0A, f=1.0kHz MAX 10 10 500 10 2.0 2.0 4.0 4.5 2.8 12000 200 300 300 UNITS V V V A A mA W W °C °C/W °C/W UNITS μA μA μA μA mA V V V V V MH...