2N6300

2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES High DC Current Gain Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector – Emitter Voltage 60V 80V VCBO Collector – Base Voltage 60V 80V VEBO Emitter – Base Voltage 5V IC Collector Current Continuous 8A Peak 16A IB Base Current PD Total Dissipation @ TC = 25°C Derate above 25°C 120mA 100W 75W 0.571W/°C 0.428W/°C TSTG , TJ TθJC Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case –65 to +200°C 1.75°C/W 2.33°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing o...