Document
SavantIC Semiconductor
Silicon PNP Power Transistors
DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301
APPLICATIONS ·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector
Product Specification
2N6298 2N6299
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6298 2N6299
VCEO
Collector-emitter voltage
2N6298 2N6299
VEBO IC ICM IB PT Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE -60 -80 -60 -80 -5 -8 -16 -0.12 75 200
-65~200
UNIT
V
V
V A A A W
MAX 2.33
UNIT /W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6298 2N6299
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
2N6298 2N6299
IC=-0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-16mA
VCEsat-2 Collector-emitter saturation voltage IC=-8A; IB=-80mA
VBEsat
Base-emitter saturation voltage
IC=-8A; IB=-80mA
VBE Base -emitter on voltage
IC=-4A ; VCE=-3V
2N6298
VCE=-60V; VBE(off)=-1.5V TC=150
ICEX Collector cut-off current
2N6299
VCE=-80V; VBE(off)=-1.5V TC=150
2N6298 VCE=-30V; IB=0 ICEO Collector cut-off current
2N6299 VCE=-40V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-3V
hFE-2
DC current gain
IC=-8A ; VCE=-3V
COB Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
MIN TYP. MAX UNIT
-60 V
-80
-2.0 V
-3.0 V
-4.0 V
-2.8 V -0.5 -5.0
mA -0.5 -5.0
-0.5 mA
-2.0 mA
750 18000
100
300 pF
2
SavantIC Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2N6298 2N6299
Fig.2 Outline dimensions 3
.