2N6285

2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6282 2N6285 60 60 2N6283 2N6286 80 80 5.0 20 40 0.5 160 -65 to +200 1.09 2N6284 2N6287 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEX VCE=Rated VCEO, VEB=1.5V ICEX VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA, (2N6282, 2N6285) 60 BVCEO IC=100mA, (2N6283, 2N6286) 80 BVCEO IC=100mA, (2N6284, 2N6287) 100 VCE(SAT) IC=10A, IB=40mA VCE(SAT) IC=20A, IB=200mA VBE(SAT) IC=20A, IB=200mA VBE(ON) VCE=3.0V, IC=10A hFE VCE=3.0V, IC=10A 750 hFE VCE=3.0V, IC=20A 100 hfe VCE=3.0V, IC=10A, f=1.0kHz 300 fT VCE=3.0V, IC=10A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN types) Cob VCB=10V, IE=0, f=100kHz (PNP types) MAX 0.5 5.0 1.0 2...