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DMG6402LVT

Diodes

30V N-Channel MOSFET

NAEDWVAPNRCOED IUNCFTORMATION YM DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) ...


Diodes

DMG6402LVT

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NAEDWVAPNRCOED IUNCFTORMATION YM DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 30mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V ID TA = +25°C 6A 5A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting TSOT26 Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: TSOT26  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.013 grams (Approximate) Drain Top View D1 D2 G3 6D 5D 4S Top View Pin Configuration Gate Body Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMG6402LVT-7 TSOT26 3,000/Tape & Reel DMG6402LVT-13 TSOT26 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.d...




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